Low-Temperature Growth and Characterization of Epitaxial YMnO3/Y2O3/Si MFIS Capacitors with Thinner Insulator Layer-Reference-Cited by-同舟云学术

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Low-Temperature Growth and Characterization of Epitaxial YMnO3/Y2O3/Si MFIS Capacitors with Thinner Insulator Layer

Published:2005-09-22 Issue:9B Volume:44 Page:6977-6980
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Haratake Kohei,Shigemitsu Norimichi,Nishijima Masanori,Yoshimura Takeshi,Fujimura Nirufumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of insulator layer thickness on electrical properties of Al/BiFeO3/ZrO2/p-Si for nonvolatile memory applications;Ferroelectrics Letters Section;2020-03-26

2. Resistive switching in polycrystalline YMnO3 thin films;AIP Advances;2014-10

3. ATOMIC LAYER DEPOSITION HfO2 FILM USED AS BUFFER LAYER OF THE Pt/(Bi0.95Nd0.05)(Fe0.95Mn0.05)O3/HfO2/Si CAPACITORS FOR FeFET APPLICATION;Journal of Advanced Dielectrics;2011-07

4. Characterization of Pt/BiFeO3/ZrO2/Si Capacitors for Memory Applications;Ferroelectrics;2010-10-29

5. Characteristics of Pt/BiFeO3/TiO2/Si capacitors with TiO2 layer formed by liquid-delivery metal organic chemical vapor deposition;Applied Physics Letters;2010-10-25

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