HfO2–Al2O3 Dielectric Layer for a Performing Metal–Ferroelectric–Insulator–Semiconductor Structure with a Ferroelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 Thin Film-Reference-Cited by-同舟云学术

HfO2–Al2O3 Dielectric Layer for a Performing Metal–Ferroelectric–Insulator–Semiconductor Structure with a Ferroelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 Thin Film

Published:2020-08-12 Issue:9 Volume:2 Page:2780-2787
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Silva José P. B.¹,Sekhar Koppole C.²^ORCID,Veltruská Katerina³,Matolín Vladimir³,Negrea Raluca F.⁴,Ghica Corneliu⁴,Oliveira Marcelo J. S.¹,Moreira Joaquim Agostinho⁵^ORCID,Pereira Mário¹,Gomes Maria J. M.¹

Affiliation:

1. Centre of Physics of University of Minho and Porto (CF-UM-UP), Campus de Gualtar, 4710-057 Braga, Portugal

2. Department of Physics, School of Basic and Applied Science, Central University of Tamil Nadu, 610 101 Thiruvarur, India

3. Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 18000 Prague 8, Czech Republic

4. National Institute of Materials Physics, 105 Bis Atomistilor, 077125 Magurele, Romania

5. IFIMUP & Department of Physics and Astronomy, Sciences Faculty, University of Porto, Rua do Campo Alegre, 687, 4169-007 Porto, Portugal

Funder

Science and Engineering Research Board

Funda??o para a Ci?ncia e a Tecnologia

Ministerul Cercetarii si Inovarii

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00480