A Ferroelectric Nonvolatile Memory-Reference-Cited by-同舟云学术

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A Ferroelectric Nonvolatile Memory

Published:1988 Issue: Volume: Page:
ISSN:
Container-title:1988 IEEE International Solid-State Circuits Conference, 1988 ISSCC. Digest of Technical Papers
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Author:

Eaton ,Butler ,Parris ,Wilson ,McNeillie

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx4/5354/14482/00663665.pdf?arnumber=663665

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical origin of hafnium-based ferroelectricity;Computational Materials Today;2024-12

2. Stacked structure dependence on resistive switching characteristics in sumanene molecular memory;Japanese Journal of Applied Physics;2024-03-18

3. Advancements in materials, devices, and integration schemes for a new generation of neuromorphic computers;Materials Today;2022-10

4. HfO2–Al2O3 Dielectric Layer for a Performing Metal–Ferroelectric–Insulator–Semiconductor Structure with a Ferroelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 Thin Film;ACS Applied Electronic Materials;2020-08-12

5. Experimental understanding of polarization switching in PZT ferroelectric capacitor;Semiconductor Science and Technology;2019-06-07

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