Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications-Reference-Cited by-同舟云学术

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Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications

Published:2015-02-16 Issue:1 Volume:5 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Kundu Souvik,Maurya Deepam,Clavel Michael,Zhou Yuan,Halder Nripendra N.,Hudait Mantu K.,Banerji Pallab,Priya Shashank

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep08494.pdf

Reference39 articles.

1. Guo, R. et al. Non-volatile memory based on the ferroelectric photovoltaic effect. Nat. Commun. 4, 1990 (2013).

2. Dubourdieu, C. et al. Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode. Nat. Nanotechnol. 8, 748–754 (2013).

3. Roy, A., Dhar, A., Bhattacharya, D. & Ray, S. K. Structural and electrical properties of metal–ferroelectric–insulator–semiconductor structure of Al/SrBi2Ta2O9/HfO2/Si using HfO2 as buffer layer. J. Phys. D. Appl. Phys. 41, 095408 (2008).

4. Lu, X., Maruyama, K. & Ishiwara, H. Characterization of HfTaO films for gate oxide and metal-ferroelectric-insulator-silicon device applications. J. Appl. Phys. 103, 044105 (2008).

5. Rao, S. S. et al. Interface Magnetism in Epitaxial BiFeO3-La0.7Sr0.3MnO3 Heterostructures Integrated on Si(100). Nano Lett. 13, 5814 (2013).

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