Optimization of bimodal nitrogen concentration profiles in silicon oxynitrides
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370890
Reference22 articles.
1. Advantages of thermal nitride and nitroxide gate films in VLSI process
2. MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/O
3. P-channel MOSFET's with ultrathin N/sub 2/O gate oxides
4. Furnace nitridation of thermal SiO/sub 2/ in pure N/sub 2/O ambient for ULSI MOS applications
5. Role of interfacial nitrogen in improving thin silicon oxides grown in N2O
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2. Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach;Journal of Applied Physics;2013-12-14
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