Electronic structure of ultrathin Si oxynitrides
Author:
Publisher
Wiley
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference15 articles.
1. Reliability: a possible showstopper for oxide thickness scaling?
2. Optimization of bimodal nitrogen concentration profiles in silicon oxynitrides
3. Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness
4. Local atomic structure and electrical properties of nitrided SiSiO2 interfaces produced by low-temperature plasma processing and rapid thermal annealing, and explained by ab-initio quantum chemistry calculations
5. Direct observation of interstitial molecular N2 in Si oxynitrides
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