Actinometry of inductively coupled Cl2∕N2 plasmas for dry etching of GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1994932
Reference26 articles.
1. Evaluation of reactive ion etching processes for fabrication of integrated GaAs/AlGaAs optoelectronic devices
2. Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application
3. Anomalous regimes for GaAs etching in Cl2–Ar plasmas
4. Temperature dependent electron cyclotron resonance etching of InP, GaP, and GaAs
5. Ecr Etching of GaP, GaAs, InP, and InGaAs in Cl2/Ar, Cl2/N2, BCl3/Ar, and BCl3/N2
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