Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application-Reference-Cited by-同舟云学术

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Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application

Published:1998-02-15 Issue:Part 1, No. 2 Volume:37 Page:373-387
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Asakawa Kiyoshi,Yoshikawa Takashi,Kohmoto Shigeru,Nambu Yoshihiro,Sugimoto Yoshimasa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anisotropic and low damage III-V/Ge heterostructure etching for multijunction solar cell fabrication with passivated sidewalls;Micro and Nano Engineering;2021-06

2. Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap;ACS Applied Materials & Interfaces;2020-07-21

3. High-Efficiency Solar Cells from Extremely Low Minority Carrier Lifetime Substrates Using Radial Junction Nanowire Architecture;ACS Nano;2019-09-20

4. Atomic layer etching of InGaAs by controlled ion beam;Journal of Physics D: Applied Physics;2017-06-06

5. Record high-aspect-ratio GaAs nano-grating lines grown by Hydride Vapor Phase Epitaxy (HVPE);Journal of Crystal Growth;2013-10

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