Record high-aspect-ratio GaAs nano-grating lines grown by Hydride Vapor Phase Epitaxy (HVPE)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference34 articles.
1. Damage-free top-down processes for fabricating two-dimensional arrays of 7 nm GaAs nanodiscs using bio-templates and neutral beam etching
2. Selective etching of GaAs over Al0.2Ga0.8As semiconductor in pulsed DC BCl3/SF6 plasmas
3. High aspect ratio GaAs nanowires made by ICP-RIE etching using Cl2/N2 chemistry
4. Influence of growth temperature on growth of InGaAs nanowires in selective-area metal–organic vapor-phase epitaxy
5. High-Density, Defect-Free, and Taper-Restrained Epitaxial GaAs Nanowires Induced from Annealed Au Thin Films
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1. Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy;Crystal Growth & Design;2023-03-21
2. Growth of long III-As NWs by hydride vapor phase epitaxy;Nanotechnology;2021-01-29
3. Long catalyst-free InAs nanowires grown on silicon by HVPE;CrystEngComm;2021
4. Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE;CrystEngComm;2018
5. Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy;Nanotechnology;2017-02-20
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