Long catalyst-free InAs nanowires grown on silicon by HVPE-Reference-Cited by-同舟云学术

Long catalyst-free InAs nanowires grown on silicon by HVPE

Published:2021 Issue:2 Volume:23 Page:378-384
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Grégoire Gabin¹²³⁴⁵^ORCID,Gil Evelyne¹²³⁴⁵,Zeghouane Mohammed¹²³⁴⁵^ORCID,Bougerol Catherine⁶²⁷⁸⁹,Hijazi Hadi¹⁰¹¹¹²,Castelluci Dominique¹²³⁴⁵,Dubrovskii Vladimir G.¹³¹⁴¹²,Trassoudaine Agnès¹²³⁴⁵,Goktas Nebile Isik¹⁵¹⁶¹⁷¹⁸,LaPierre Ray R.¹⁵¹⁶¹⁷¹⁸,André Yamina¹²³⁴⁵

Affiliation:

1. Université Clermont Auvergne

2. CNRS

3. SIGMA Clermont

4. Institut Pascal

5. F-63000 Clermont-Ferrand

6. Université Grenoble Alpes

7. Institut Neel

8. 38000 Grenoble

9. France

10. ITMO University

11. 197101 St. Petersburg

12. Russia

13. St. Petersburg State University

14. St. Petersburg

15. Department of Engineering Physics

16. McMaster University

17. Hamilton

18. Canada

Abstract

We report for the first time on the hydride vapor phase epitaxy (HVPE) growth of long (26 μm) InAs nanowires on Si(111) substrate. The thermodynamic and kinetic mechanisms involved during the growth of such long nanowires are identified.

Funder

Région Auvergne-Rhône-Alpes

Natural Sciences and Engineering Research Council of Canada

Russian Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CE/D0CE01385D

Reference40 articles.

1. Temperature-dependent electron mobility in InAs nanowires