Sub 60 mV/decade Switch Using an InAs Nanowire–Si Heterojunction and Turn-on Voltage Shift with a Pulsed Doping Technique-Reference-Cited by-同舟云学术

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Sub 60 mV/decade Switch Using an InAs Nanowire–Si Heterojunction and Turn-on Voltage Shift with a Pulsed Doping Technique

Published:2013-11-13 Issue:12 Volume:13 Page:5822-5826
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Tomioka Katsuhiro¹²³,Yoshimura Masatoshi¹²,Fukui Takashi¹²

Affiliation:

1. Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan

2. Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan

3. PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl402447h

Reference35 articles.

1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

2. Impact of surrounding gate transistor (SGT) for ultra-high-density LSI's

3. Nanometre-scale electronics with III–V compound semiconductors

4. A III–V nanowire channel on silicon for high-performance vertical transistors

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