Anisotropic and low damage III-V/Ge heterostructure etching for multijunction solar cell fabrication with passivated sidewalls-Reference-Cited by-同舟云学术

Anisotropic and low damage III-V/Ge heterostructure etching for multijunction solar cell fabrication with passivated sidewalls

Published:2021-06 Issue: Volume:11 Page:100083
ISSN:2590-0072
Container-title:Micro and Nano Engineering
language:en
Short-container-title:Micro and Nano Engineering

Author:

de Lafontaine Mathieu,Pargon Erwine,Gay Guillaume,Petit-Etienne Camille,David Sylvain,Barnes Jean-Paul,Rochat Névine,Jaouad Abdelatif,Volatier Maïté,Fafard Simon,Aimez Vincent,Darnon Maxime

Funder

NSERC

Centre National de la Recherche Scientifique

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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4. Sidewall passivation assisted by a silicon coverplate during cl2–h2 and hbr inductively coupled plasma etching of inp for photonic devices;Bouchoule;J. Vacu. Sci. Technol B: Microelectr. Nanometer Struct. Proces. Measure. Phenomena,2008

5. Mechanism of silicon film deposition in the rf plasma reduction of silicon tetrachloride;Bruno;Plasma Chem. Plasma Process.,1986

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