Mechanism of silicon film deposition in the RF plasma reduction of silicon tetrachloride-Reference-Cited by-同舟云学术

Mechanism of silicon film deposition in the RF plasma reduction of silicon tetrachloride

Published:1986-06 Issue:2 Volume:6 Page:109-125
ISSN:0272-4324
Container-title:Plasma Chemistry and Plasma Processing
language:en
Short-container-title:Plasma Chemistry and Plasma Processing

Author:

Bruno G.,Capezzuto P.,Cicala G.,Cramarossa F.

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,General Chemical Engineering,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF00571271.pdf

Reference29 articles.

1. M. H. Brodsky, ed., ?Amorphous Semiconductors,?Topics in Applied Physics, Vol. 36, Springer-Verlag, Berlin (1979).

2. A. Madan, S. R. Ovshinsky, and E. Benn,Phyl. Mag. 40, 259 (1979).

3. E. Grossman, R. Avni, and A. Grill, inProc. 5th Int. Symp. on Plasma Chemistry (ISPC-5), Edinburgh, 1981, B. Waldie and G. A. Farnell, eds., Heriot-Watt University, Edinburgh (1981), p. 658.

4. Z. Iqbal, P. Capezzuto, M. Braun, H. R. Oswald, S. Vep?ek, G. Bruno, F. Cramarossa, H. Stüssi, J. Brunner, and M. Schärli,Thin Solid Films 87, 43 (1982).

5. G. Bruno, P. Capezzuto, and F. Cramarossa,Thin Solid Films 106, 145 (1983).

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