Demonstration of ferroelectricity in ScGaN thin film using sputtering method-Reference-Cited by-同舟云学术

Demonstration of ferroelectricity in ScGaN thin film using sputtering method

Published:2021-10-25 Issue:17 Volume:119 Page:172901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Uehara Masato¹^ORCID,Mizutani Ryoichi²,Yasuoka Shinnosuke²^ORCID,Shiraishi Takahisa²^ORCID,Shimizu Takao³⁴^ORCID,Yamada Hiroshi¹^ORCID,Akiyama Morito¹^ORCID,Funakubo Hiroshi²⁵^ORCID

Affiliation:

1. Sensing System Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 807-1, Shuku-machi, Tosu, Saga 841-0052, Japan

2. Department of Materials Science and Engineering, Tokyo Institute of Technology, J2-43 4259, Nagatsuta-cho Yokohama, Kanagawa 226-8502, Japan

3. Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1, Namiki, Tsuku-ba, Tsukuba 305-0044, Japan

4. PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi-shi, Saitama, 332-0012, Japan

5. Materials Research Center for Element Strategy (Tokyo Tech MCES), Tokyo Institute of Technology, Nagatsuta-cho Yokohama, Kanagawa 226-8502, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Precursory Research for Embryonic Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0068059

Reference32 articles.

1. Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering

2. Origin of the Anomalous Piezoelectric Response in WurtziteScxAl1−xNAlloys

3. AlScN: A III-V semiconductor based ferroelectric

4. Ferroelectricity in hafnium oxide thin films

5. The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

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