Full polarization reversal at room temperature in unsubstituted AlN

Abstract

Room temperature ferroelectricity in unsubstituted AlN films is studied to examine the role of cation substitution into wurtzite materials. AlN and (Al0.7Sc0.3)N films deposited on (111) 0.5 wt. % Nb-doped SrTiO3 have a (0001)-orientation with different in-plane lattice alignments with respect to those of the substrate, depending on the composition and the deposition temperature. The AlN films deposited at 450 °C showed complete ferroelectric switching above 140 °C but local polarization switching at room temperature because a dielectric breakdown occurred before complete switching, while full polarization reversal was observed at all measurement temperatures for (Al0.7Sc0.3)N. Low-temperature deposition, such as at 250 °C, significantly enhanced the dielectric breakdown field and also increased leakage current. As a result, sufficient polarization switching at room temperature was observed in the AlN film deposited at 250 °C. Positive-up/negative-down pulse measurements showed remanent polarization of 150 μC/cm2 and a coercive field of 8.3 MV/cm, in agreement with the theoretical value and temperature dependence observed for the AlN film deposited at 450 °C. The observed coercive field value lies on the line composed of the previously reported data in Sc concentration dependence. This tendency implies that the reduction in the coercive field is primarily attributable to the alteration of crystal lattice anisotropy caused by Sc.