N–O related shallow donors in silicon: Stoichiometry investigations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2795801
Reference17 articles.
1. Silicon crystals for future requirements of 300mm wafers
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3. The impact of nitrogen on the defect aggregation in silicon
4. The effect of nitrogen on void formation in Czochralski silicon crystals
5. Far-infrared absorption due to electronic transitions of N–O complexes in Czochralski-grown silicon crystals: Influence of nitrogen and oxygen concentration
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2. Participation of nitrogen impurities in the growth of grown-in oxide precipitates in nitrogen-doped Czochralski silicon;Journal of Applied Physics;2022-04-21
3. On the mechanism underlying the elimination of nitrogen-oxygen shallow thermal donors in nitrogen-doped Czochralski silicon at elevated temperatures;Journal of Applied Physics;2021-04-14
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