Far-infrared absorption due to electronic transitions of N–O complexes in Czochralski-grown silicon crystals: Influence of nitrogen and oxygen concentration-Reference-Cited by-同舟云学术

Far-infrared absorption due to electronic transitions of N–O complexes in Czochralski-grown silicon crystals: Influence of nitrogen and oxygen concentration

Published:2005-10-10 Issue:15 Volume:87 Page:151909
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Alt H. Ch.,Gomeniuk Y. V.,Bittersberger F.,Kempf A.,Zemke D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2099517

Reference21 articles.

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2. Nitrogen effect on oxygen precipitation in Czochralski silicon

3. R. Schmolke, M. Blietz, R. Schauer, D. Zemke, H. Oelkrug, W. v. Ammon, U. Lambert, and D. Gräf, in: High Purity Silicon VI, The Electrochemical Society Proceedings 2000 (Pennington, NJ, 2000), p. 3.

4. M. Iida, W. Kusaki, M. Tamatsuka, E. Iino, M. Kimura, and S. Muraoka, in: Defects in Silicon III, The Electrochemical Society Proceedings 1999 (Pennington, NJ, 1999), p. 499.

5. Vibrational absorption bands for implanted nitrogen in crystalline silicon

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