Nitrogen-containing point defects in multi-crystalline Si solar-cell materials-Reference-Cited by-同舟云学术

Nitrogen-containing point defects in multi-crystalline Si solar-cell materials

Published:2013-09-07 Issue:9 Volume:114 Page:093707
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhang Haoxiang,Stavola Michael,Seacrist Mike

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4820516

Reference37 articles.

1. M. Suezawa, in Properties of Crystalline Silicon, edited by R. Hull (INSPEC, London, 1999), p. 538.

2. Effects of nitrogen on dislocation behavior and mechanical strength in silicon crystals

3. Nitrogen effects on generation and velocity of dislocations in Czochralski-grown silicon

4. Nitrogen diffusion and interaction with dislocations in single-crystal silicon

5. T. Abe and K. Kimura, in Semiconductor Silicon 1990, edited by H. R. Huff, K. Barraclough, and J. Chikawa (Electrochemical Society, Pennington, NJ, 1990), p. 105.

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