Symmetry and structure of N–O shallow donor complexes in silicon-Reference-Cited by-同舟云学术

Symmetry and structure of N–O shallow donor complexes in silicon

Published:2012-08 Issue:15 Volume:407 Page:2985-2988
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Alt H.Ch.,Wagner H.E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Far-infrared absorption due to electronic transitions of N–O complexes in Czochralski-grown silicon crystals: Influence of nitrogen and oxygen concentration

3. W.V. Ammon, A. Ehlert, W. Hensel, in: Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing, B.O. Kolbesen et al. (Eds.), The Electrochemical Society Proceedings Series, Pennington, NJ, 1993, pp. 36–50.

4. Shallow thermal donors in nitrogen-doped silicon

5. Determination of the Deformation-Potential Constant of the Conduction Band of Silicon from the Piezospectroscopy of Donors

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