Piezospectroscopy of nitrogen-oxygen shallow donor complexes in silicon
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.82.115203/fulltext
Reference38 articles.
1. The impact of nitrogen on the defect aggregation in silicon
2. Oxygen precipitation in nitrogen-doped Czochralski-grown silicon crystals
3. Infrared absorption band for substitutional nitrogen in silicon
4. Identification of the dominant nitrogen defect in silicon
5. Microstructure of the nitrogen pair in crystalline silicon studied by ion channeling
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1. Participation of nitrogen impurities in the growth of grown-in oxide precipitates in nitrogen-doped Czochralski silicon;Journal of Applied Physics;2022-04-21
2. On the mechanism underlying the elimination of nitrogen-oxygen shallow thermal donors in nitrogen-doped Czochralski silicon at elevated temperatures;Journal of Applied Physics;2021-04-14
3. Nitrogen Impurity in Crystalline Silicon;Handbook of Photovoltaic Silicon;2019
4. Nitrogen Impurity in Crystalline Silicon;Handbook of Photovoltaic Silicon;2019
5. Ground state of ultrashallow thermal donors in silicon;Japanese Journal of Applied Physics;2018-09-04
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