Infrared absorption band for substitutional nitrogen in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96273
Reference3 articles.
1. Ion‐implanted nitrogen in gallium arsenide
2. Deep-level nitrogen centers in laser-annealed ion-implanted silicon
3. Substitutional nitrogen impurities in pulsed‐laser annealed silicon
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