Microvoid Defects in Nitrogen- and/or Carbon-doped Czochralski-grown Silicon Crystals-Reference-Cited by-同舟云学术

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Microvoid Defects in Nitrogen- and/or Carbon-doped Czochralski-grown Silicon Crystals

Published:2003-02-15 Issue:Part 1, No. 2A Volume:42 Page:363-370
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takahashi Jun,Nakai Katsuhiko,Kawakami Kazuto,Inoue Yoshiharu,Yokota Hideki,Tachikawa Akiyoshi,Ikari Atsushi,Ohashi Wataru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=2R/a=363/pdf

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitrogen-Related Defects in Crystalline Silicon;Applied Sciences;2024-02-18

2. A density functional theory study of the C_iN and the C_iNO_i complexes in silicon;Modern Physics Letters B;2023-07-10

3. Preferential Growth Mode of Large-Sized Vacancy Clusters in Silicon: A Neural-Network Potential and First-Principles Study;The Journal of Physical Chemistry C;2021-11-27

4. Revisiting the effects of carbon-doping at 1017 cm−3 level on dislocation behavior of Czochralski silicon: from room temperature to elevated temperatures;Journal of Materials Science: Materials in Electronics;2019-01-02

5. Carbon effect on the survival of vacancies in Czochralski silicon during rapid thermal anneal;Journal of Applied Physics;2017-07-28

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