Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1592299
Reference14 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
3. From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy
4. Effect of nitrogen on the band structure of GaInNAs alloys
5. Band structure ofInxGa1−xAs1−yNyalloys and effects of pressure
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1. LPE growth and characterization of InAs1−xNx films;Journal of Crystal Growth;2014-07
2. Evidence for Fermi level shift in GaInAs/GaAs quantum wells upon nitrogen incorporation;Solid State Communications;2010-01
3. Metalorganic Vapor-Phase Epitaxy of Diluted Nitrides and Arsenide Quantum Dots;Springer Handbook of Crystal Growth;2010
4. Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications;PHYS STATUS SOLIDI B;2007
5. Nitrogen content of GaAsN quantum wells by in situ monitoring during MOVPE growth;Journal of Crystal Growth;2006-05
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