LPE growth and characterization of InAs1−xNx films-Reference-Cited by-同舟云学术

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LPE growth and characterization of InAs1−xNx films

Published:2014-07 Issue: Volume:398 Page:1-4
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lv Y.F.,Hu S.H.,Yang X.Y.,Wang Y.,Sun C.H.,Qiu F.,Cong R.,Dong W.J.,Zhang Y.,Yu G.L.,Dai N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. Strong composition-dependent disorder in InAs1−xNx alloys;Benaissaa;J. Alloys Compd.,2009

2. Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys;Veal;Appl. Phys. Lett.,2005

3. Nitrogen- induced enhancement of the electron effective mass in InNxAs1−x;Hung;Appl. Phys. Lett.,2002

4. Auger recombination in long-wavelength infrared InNxSb1−x alloys;Murdin;Appl. Phys. Lett.,2001

5. Band gap reduction in GaNSb alloys due to the anion mismatch;Veal;Appl. Phys. Lett.,2005

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical exploration of the optoelectronic properties of InAsNBi/InAs heterostructures for infrared applications: A multi-band k·p approach;Materials Science in Semiconductor Processing;2022-09

2. Investigation of Optoelectronic Performance of InAsNBi for Infrared Detection;Tailored Functional Materials;2022

3. LPE growth and optical characteristics of GaAs 1− x Sb x epilayer;Journal of Crystal Growth;2017-04

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