Nitrogen content of GaAsN quantum wells by in situ monitoring during MOVPE growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Dilute nitride absorbers in passive devices for mode locking of solid-state lasers
2. Low-loss GaInNAs saturable absorber mode locking a 1.3-μm solid-state laser
3. Phase-matching conditions for nonlinear frequency conversion by use of aligned molecular gases
4. In situ reflectance monitoring of the growth and etching of AlAs/GaAs structures in MOVPE
5. MOVPE growth and in situ characterization of GaN layers on sapphire substrates
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1. In situ monitoring of InAsBi alloy grown under alternated bismuth flows by metalorganic vapor phase epitaxy;Materials Science and Engineering: B;2019-02
2. Temperature Dependence Of Current-Voltage Characteristics Of Au∕p-GaAsN Schottky Barrier Diodes, With Small N Content;AIP Conference Proceedings;2011
3. AP-MOVPE of InGaAs on GaAs (001): Analysis of in situ reflectivity response;Microelectronics Journal;2008-12
4. In situ determination of InGaAs and GaAsN composition in multiquantum-well structures;Journal of Applied Physics;2007-02
5. Comparison of and as carrier gas in MOVPE growth of InGaAsN quantum wells;Journal of Crystal Growth;2007-01
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