In situ determination of InGaAs and GaAsN composition in multiquantum-well structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2435065
Reference11 articles.
1. In situ laser reflectometry applied to the growth of AlxG1−xAs Bragg reflectors by metalorganic chemical vapour deposition
2. Vertical-cavity surface emitting lasers: moving from research to manufacturing
3. In-SituMonitoring of In0.53Al0.13Ga0.34As/In0.52Al0.48As 1.55 µm Vertical Cavity Surface Emitting Laser Structure Grown by Metal Organic Chemical Vapor Deposition
4. A virtual interface method for extracting growth rates and high temperature optical constants from thin semiconductor films usinginsitunormal incidence reflectance
5. In situ reflectance monitoring of the growth and etching of AlAs/GaAs structures in MOVPE
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1. In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions;Advanced Materials Interfaces;2017-10-10
2. Guiding effect of quantum wells in semiconductor lasers;Quantum Electronics;2013-05-31
3. In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs;Journal of Materials Science: Materials in Electronics;2007-06-28
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