In situ reflectance monitoring of the growth and etching of AlAs/GaAs structures in MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. In situ pre-growth calibration using reflectance as a control strategy for MOCVD fabrication of device structures
2. Optical evaluation of an AlAs/AlGaAs visible Bragg reflector grown by chemical beam epitaxy
3. Insitumetalorganic vapor phase epitaxy control of GaAs/AlAs Bragg reflectors by laser reflectometry at 514 nm
4. Optical properties of AlxGa1−xAs
5. In situ optical monitoring of metalorganic vapor phase epitaxy growth of C-doped GaAs
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1. In situ spectral reflectance analysis of the early stages of GaN thermal decomposition;Optik;2022-09
2. Analysis of in situ thin films epitaxy by reflectance spectroscopy: Effect of growth parameters;Superlattices and Microstructures;2019-07
3. Influence of plasma composition on reflectance anisotropy spectra for in situ III–V semiconductor dry-etch monitoring;Applied Surface Science;2015-12
4. Investigations of in situ reflectance of GaN layers grown by MOVPE on GaAs (0 0 1);Superlattices and Microstructures;2015-10
5. Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment;Applied Surface Science;2015-02
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