Comparison of and as carrier gas in MOVPE growth of InGaAsN quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine
3. High-Quality InGaAsN Growth by Metalorganic Vapor-Phase Epitaxy Using Nitrogen Carrier Gas and Dimethylhydrazine, Tertiarybutylarsine as Group V Precursors
4. Nitrogen content of GaAsN quantum wells by in situ monitoring during MOVPE growth
5. O. Reentilä, M. Mattila, L. Knuuttila, T. Hakkarainen, M. Sopanen, H. Lipsanen, J. Appl. Phys. 100 (2006) 013509.
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1. High-Power Laser Diodes Based on InGaAs(P)/Al(In)GaAs(P)/GaAs Heterostructures with Low Internal Optical Loss;Bulletin of the Lebedev Physics Institute;2023-09
2. Strained-layer quantum well materials grown by MOCVD for diode laser application;Progress in Quantum Electronics;2021-01
3. Growth far from equilibrium: Examples from III-V semiconductors;Applied Physics Reviews;2016-12
4. Effect of n-Type AlGaAs Layer on Efficiency of Reflective 590-nm AlGaInP Light Emitting Diodes;ECS Journal of Solid State Science and Technology;2015
5. III-V-N alloys grown by MOVPE in H 2 and N 2 mixed carrier gases;Quantum Sensing and Nanophotonic Devices IX;2012-01-21
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