Effect of n-Type AlGaAs Layer on Efficiency of Reflective 590-nm AlGaInP Light Emitting Diodes
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Material issues in AlGaInP red-emitting laser diodes
2. AlGaInP light-emitting diode with tensile strain barrier reducing layer
3. Strain effect and characteristics of GaInP/AlGaInP strain-compensated multiple quantum wells
4. Optimum Mg Doping Conditions of GaP Window Layer in 600 nm Multi-Quantum Well AlGaInP Light Emitting Diode
5. Chirped GaAs-AlAs distributed Bragg reflectors for high brightness yellow-green light-emitting diodes
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