Heat-resistant reflectors for enhanced 850-nm near infrared light-emitting diode efficiency

Author:

Lee Hyung-Joo,Park Gwang-Hoon,So Jin-Su,Lee Choong-Hun,Kim Jae-Hoon,Kwac Lee-Ku

Funder

National Research Foundation of Korea

Kementerian Pendidikan Malaysia

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Effect of a highly doped emitting window for increasing output power of 860-nm GaAs VCSELs;Lee;Infrared Phys. Tech.,2019

2. Balanced Strain Compensation of In0.07GaAs/Al0.2GaAs/GaAsP0.06 for improving 940 nm Infrared Light emitting diodes;An;J. Nanosci. Nanotechnol.,2019

3. Light Emitting Diodes;Schubert,2006

4. Development of High power Infarred LED;Kitabayashi;S. E. I. Tech.,2010

5. Lumileds Holding BV, 2018. WP35 Infrared Illumination for Time of Fight Applications, [online] Available at: http://www.lumileds.com/wp-content/uploads/files/WP35.pdf [Accesed 24 Mar.2021].

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