Effect of a highly doped emitting window for increasing output power of 860-nm GaAs VCSELs-Reference-Cited by-同舟云学术

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Effect of a highly doped emitting window for increasing output power of 860-nm GaAs VCSELs

Published:2019-05 Issue: Volume:98 Page:292-296
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Lee Hyung-Joo,Park Gwang-Hoon,So Jin-Su,Kim Hong-Gun,Kwac Lee-Ku,An Won-Chan

Funder

National Research Foundation

Ministry of Education

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Data pattern dependence of VCSEL far-field distributions;Al-sowayan;IEEE Photon. Technol. Lett.,2004

2. Impact of photo lifetime on the temperature stability of 50 Gb/s 980-nm VCSELs;Larisch;IEEE Photon. Technol. Lett.,2016

3. Fabrication and performance of selectively oxidized vertica-cavity lasers;Choquette;IEEE Photon. Technol. Lett.,1995

4. Investigation of single-mode vertical-cavity surface-emitting lasers with graphene-bubble dielectric DBR;Guan;Photon. Nanostruc. – Fundament. Appl.,2018

5. Single-material Bragg reflectors and their applications in VCSELs;Choi;J. Kor. Phys. Soc.,2018

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2. Study on P-AlGaAs/Al/Au Ohmic Contact Characteristics for Improving Optoelectronic Response of Infrared Light-Emitting Device;Micromachines;2023-05-16

3. Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs;Nanoscale Research Letters;2021-11-18

4. Heat-resistant reflectors for enhanced 850-nm near infrared light-emitting diode efficiency;Infrared Physics & Technology;2021-11

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