Optimum Mg Doping Conditions of GaP Window Layer in 600 nm Multi-Quantum Well AlGaInP Light Emitting Diode
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference16 articles.
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3. Optimization of the Number of Quantum Well Pairs for High-Brightness AlGaInP-Based Light Emitting Diodes
4. High-Performance Vertical Light-Emitting Diodes with Buried Current Blocking Layer and Non-Alloyed Reflective Cr/Al/Pt/Au n-type Electrodes
5. Growth of a GaP window layer on AlGaInP light-emitting diodes using misoriented substrates
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