Growth of a GaP window layer on AlGaInP light-emitting diodes using misoriented substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Electroluminescence atp‐nJunctions in Gallium Phosphide
2. High performance AlGaInP visible light‐emitting diodes
3. High‐efficiency InGaAlP/GaAs visible light‐emitting diodes
4. The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer
5. Twofold efficiency improvement in high performance AlGaInP light‐emitting diodes in the 555–620 nm spectral region using a thick GaP window layer
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1. Reduction of surface defects on the GaP window layer of 630 nm AlGaInP LED using post-Zn diffusion process;Current Applied Physics;2013-08
2. Optimum Mg Doping Conditions of GaP Window Layer in 600 nm Multi-Quantum Well AlGaInP Light Emitting Diode;ECS Journal of Solid State Science and Technology;2013
3. Study of AlGaInP multiquantum-well/double heterostructure light-emitting diodes with In-added GaP window layer regrown by antimony-based liquid phase epitaxy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004
4. The Comparisons between GaP Window Layers of Double-Heterojunction Light-Emitting Diodes using Various Dopants and Source Melts Regrown by Indium-Addition Liquid Phase Epitaxy;Japanese Journal of Applied Physics;2003-09-15
5. The influence of window layers on the performance of 650nm AlGaInP/GaInP multi-quantum-well light-emitting diodes;Journal of Crystal Growth;1999-04
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