The Comparisons between GaP Window Layers of Double-Heterojunction Light-Emitting Diodes using Various Dopants and Source Melts Regrown by Indium-Addition Liquid Phase Epitaxy
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Published:2003-09-15
Issue:Part 1, No. 9A
Volume:42
Page:5709-5713
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Hsieh Li-Zen,Chang Li-Yuan
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
1 articles.
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1. Liquid Phase Epitaxy for Light Emitting Diodes;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04