AP-MOVPE of InGaAs on GaAs (001): Analysis of in situ reflectivity response
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference27 articles.
1. Annealing effects on lattice-strain–relaxed In0.5Al0.5As/In0.5Ga0.5As heterostructures grown on GaAs substrates
2. High-PerformanceIn0.5Al0.5As/In0.5Ga0.5AsHigh Electron Mobility Transistors on GaAs
3. Lattice‐strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performance
4. Demonstration of aluminum-free metamorphic InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors on GaAs substrates
5. The time-resolved spectroscopy of InGaAs/AlGaAs heterostructures with asymmetric funnel-shape quantum wells for near- and mid-IR lasing
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1. Analysis of in situ thin films epitaxy by reflectance spectroscopy: Effect of growth parameters;Superlattices and Microstructures;2019-07
2. High‐Resolution X‐Ray Diffraction of III–V Semiconductor Thin Films;X-ray Scattering;2017-01-25
3. The influence of In composition on properties of In x Ga 1-x As/GaAs structures grown by MOVPE and in situ monitored by spectral reflectance;Superlattices and Microstructures;2017-01
4. Strain study of GaAs/In x Ga 1−x As/GaAs structures grown by MOVPE;Surface and Coatings Technology;2016-06
5. Optical properties study of InxGa1−xAs/GaAs structures using spectral reflectance, photoreflectance and near-infrared photoluminescence;Superlattices and Microstructures;2014-09
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