High-PerformanceIn0.5Al0.5As/In0.5Ga0.5AsHigh Electron Mobility Transistors on GaAs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. AP-MOVPE of InGaAs on GaAs (001): Analysis of in situ reflectivity response;Microelectronics Journal;2008-12
2. Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy;Journal of Applied Physics;2003-04
3. Direct Growth of High-Quality InxGa1-xAs Strained Layers on Misoriented GaAs Substrates Grown by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2002-03-15
4. Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In0.5Al0.5As/In0.5Ga0.5As/InAsP High-Electron-Mobility Structures on GaAs Substrates;Japanese Journal of Applied Physics;2002-02-28
5. Comparison of In[sub 0.33]Al[sub 0.67]As/In[sub 0.34]Ga[sub 0.66]As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
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