Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy-Reference-Cited by-同舟云学术

Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy

Published:2003-04 Issue:7 Volume:93 Page:4219-4225
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chauveau J.-M.,Androussi Y.,Lefebvre A.,Di Persio J.,Cordier Y.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1544074

Reference29 articles.

1. Interfacial roughness and carrier scattering due to misfit dislocations in In[sub 0.52]Al[sub 0.48]As/In[sub 0.75]Ga[sub 0.25]As/InP structures

2. A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMT

3. A 95-GHz InP HEMT MMIC amplifier with 427-mW power output

4. High-PerformanceIn0.5Al0.5As/In0.5Ga0.5AsHigh Electron Mobility Transistors on GaAs

5. The indium content in metamorphic As/As HEMTs on GaAs substrate: a new structure parameter

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