High carrier lifetimes in epitaxial germanium–tin/Al(In)As heterostructures with variable tin compositions-Reference-Cited by-同舟云学术

High carrier lifetimes in epitaxial germanium–tin/Al(In)As heterostructures with variable tin compositions

Published:2022 Issue:29 Volume:10 Page:10530-10540
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Hudait Mantu K.¹^ORCID,Johnston Steven W.²,Clavel Michael B.¹^ORCID,Bhattacharya Shuvodip¹,Karthikeyan Sengunthar¹,Joshi Rutwik¹

Affiliation:

1. Advanced Devices & Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA

2. National Renewable Energy Laboratory, Golden, Colorado 80401, USA

Abstract

Carrier lifetimes vs. Sn compositions of the Ge1−ySny/III–V heterostructures.

Funder

Division of Electrical, Communications and Cyber Systems

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC00830K

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4. Optically Pumped GeSn Microdisk Lasers on Si

5. Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si

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