Evidence for Fermi level shift in GaInAs/GaAs quantum wells upon nitrogen incorporation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference15 articles.
1. Band Anticrossing in GaInNAs Alloys
2. Localization and anticrossing of electron levels inGaAs1−xNxalloys
3. GaAs:N vs GaAs:B alloys: Symmetry-induced effects
4. Unification of the Band Anticrossing and Cluster-State Models of Dilute Nitride Semiconductor Alloys
5. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
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1. Nitrogen-related intermediate band in P-rich GaNxPyAs1−x−y alloys;Scientific Reports;2017-11-16
2. Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures;Opto-Electronics Review;2012-01-01
3. Conduction and valence band positions versus the Fermi-level stabilization energy in quaternary dilute nitrides;physica status solidi (c);2011-03-31
4. Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement;Applied Physics Letters;2010-07-12
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