Unification of the Band Anticrossing and Cluster-State Models of Dilute Nitride Semiconductor Alloys
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.93.196402/fulltext
Reference26 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Experimental studies of the conduction-band structure of GaInNAs alloys
3. Type I band alignment in theGaNxAs1−x/GaAsquantum wells
4. Direct determination of electron effective mass in GaNAs/GaAs quantum wells
5. Magnetophotoluminescence studies of (InGa)(AsN)/GaAs heterostructures
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