Experimental studies of the conduction-band structure of GaInNAs alloys
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference62 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
3. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
4. Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements
5. Luminescence quenching and the formation of the GaP1−xNxalloy in GaP with increasing nitrogen content
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