Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement-Reference-Cited by-同舟云学术

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Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement

Published:2010-07-12 Issue:2 Volume:97 Page:021902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kudrawiec R.,Gladysiewicz M.,Misiewicz J.,Korpijärvi V.-M.,Pakarinen J.,Puustinen J.,Laukkanen P.,Laakso A.,Guina M.,Dumitrescu M.,Pessa M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3462299

Reference18 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. Correlation between the optical quality and the Fermi level position in GaInNAs alloys

3. On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%–32%

4. Evidence for Fermi level shift in GaInAs/GaAs quantum wells upon nitrogen incorporation

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells;IEEE Photonics Journal;2012-12

2. Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures;Opto-Electronics Review;2012-01-01

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