Correlation between the optical quality and the Fermi level position in GaInNAs alloys
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/41/i=24/a=245107/pdf
Reference33 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Band Anticrossing in GaInNAs Alloys
3. Theory of electronic structure evolution in GaAsN and GaPN alloys
4. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
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2. Theoretical studies on band structure and optical gain of GaInAsN/GaAs /GaAs cylindrical quantum dot;Superlattices and Microstructures;2018-07
3. Investigation of the doping and Stark effects on the band structure and optical absorption of 1.55 μm GaNAsBi/GaAs MQWs;Current Applied Physics;2016-03
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5. 8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates;Journal of Applied Physics;2015-08-07
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