GaAs:N vs GaAs:B alloys: Symmetry-induced effects
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.161201/fulltext
Reference24 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
3. Band Anticrossing in GaInNAs Alloys
4. Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction inGaAs1−xNxwithx<0.03
5. Band structure ofInxGa1−xAs1−yNyalloys and effects of pressure
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