Ni diffusion and its influence on electrical properties of AlxGa1−xN∕GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3010371
Reference19 articles.
1. Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures
2. Gate current leakage and breakdown mechanism in unpassivated AlGaN∕GaN high electron mobility transistors by post-gate annealing
3. Contact mechanisms and design principles for Schottky contacts to group-III nitrides
4. Passivation effects in Ni∕AlGaN∕GaN Schottky diodes by annealing
5. Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN∕GaN heterostructures
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1. Chip-level thermal management in GaN HEMT: Critical review on recent patents and inventions;Microelectronic Engineering;2023-03
2. Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes;Applied Physics A;2015-09-29
3. Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy;Physical Review Applied;2014-12-30
4. Performance comparison of Pt/Au and Ni/Au Schottky contacts on Al x Ga 1− x N/GaN heterostructures at high temperatures;Chinese Physics B;2010-12
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