Performance comparison of Pt/Au and Ni/Au Schottky contacts on Al x Ga 1− x N/GaN heterostructures at high temperatures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference16 articles.
1. Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures
2. The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al 0.245 Ga 0.755 N/GaN heterostructure and Ni/Au Schottky contact
3. Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal
4. Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films
5. Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal Annealing Effects on the Electrical and Structural Properties of Ni/Pt Schottky Contacts on the Quaternary AlInGaN Epilayer;Journal of Electronic Materials;2018-11-15
2. Thermal stability of a Schottky diode fabricated with transfer-free deposition of multilayer graphene on n-GaN by solid-phase reactions;Japanese Journal of Applied Physics;2017-06-29
3. High temperature characteristics of AlGaN/GaN high electron mobility transistors;Chinese Physics B;2011-11
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