High temperature characteristics of AlGaN/GaN high electron mobility transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Extension of ASM-HEMT Framework for Cryogenic Temperatures;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03
2. Charge-Based Flicker Noise Modeling of GaN HEMTs Down to Cryogenic Temperatures;IEEE Electron Device Letters;2023-09
3. Trap-assisted degradation mechanisms in E-mode p-GaN power HEMT: A review;Microelectronics Reliability;2022-12
4. Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures;IEEE Transactions on Electron Devices;2022-11
5. The Electrical-thermal Coupling Modeling about Large Periphery RF GaN HEMT on Si employing by Through Wafer Via Structure;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25
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