The Electrical-thermal Coupling Modeling about Large Periphery RF GaN HEMT on Si employing by Through Wafer Via Structure
Author:
Affiliation:
1. Fudan University,State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems,School of Microelectronics,Shanghai,China,200433
2. Nanjing Electronic Device Institute,Nanjing,China,210016
Funder
National Natural Science Foundation of China
Research and Development
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9962815/9963138/09963151.pdf?arnumber=9963151
Reference5 articles.
1. Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications
2. High temperature characteristics of AlGaN/GaN high electron mobility transistors
3. AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications
4. Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor
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