Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures-Reference-Cited by-同舟云学术

Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures

Published:2022-11 Issue:11 Volume:69 Page:6016-6022
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nazir Mohammad Sajid¹^ORCID,Kushwaha Pragya²^ORCID,Pampori Ahtisham¹^ORCID,Ahsan Sheikh Aamir³^ORCID,Chauhan Yogesh Singh¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Nanolab, Indian Institute of Technology (IIT) Kanpur, Kanpur, India

2. Space Applications Centre, Micro Electronics Group, Indian Space Research Organisation, Ahmedabad, India

3. Department of Electronics and Communication Engineering, Nanoelectronic Research and Development Laboratory, National Institute of Technology Srinagar, Srinagar, India

Funder

Swarna Jayanti Fellowship

Department of Science and Technology

S&T Infrastructure (FIST) Scheme of the Department of Science and Technology

DST-Science and Engineering Board (SERB) Startup Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9926983/09896842.pdf?arnumber=9896842

Reference66 articles.

1. Temperature Dependence of the Energy Gap in GaAs

2. Temperature and polarization dependent polynomial based non-linear analytical model for gate capacitance of AlmGa1−mN/GaN MODFET

3. Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors

4. Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

5. Leakage current, capacitance hysteresis and deep traps in Al0.25Ga0.75N/GaN/SiC high-electron-mobility transistors

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