The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al 0.245 Ga 0.755 N/GaN heterostructure and Ni/Au Schottky contact
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference11 articles.
1. Properties of GaN and AlGaN Schottky contacts revealed from I–V–T and C–V–T measurements
2. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
3. Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN∕GaN high electron mobility transistor characteristics
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1. Dependence of Nitrogen/Argon Reaction Gas Amount on Structural, Mechanical and Optical Properties of Thin WN x Films;Chinese Physics Letters;2017-12
2. High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes;Chinese Physics Letters;2014-06
3. Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN;Chinese Physics B;2011-06
4. PEDOT:PSS Schottky contacts on annealed ZnO films;Chinese Physics B;2011-04
5. Performance comparison of Pt/Au and Ni/Au Schottky contacts on Al x Ga 1− x N/GaN heterostructures at high temperatures;Chinese Physics B;2010-12
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